SYNTHESIS OF TUNGSTEN AND SILICON CARBIDE NANORODS
Description of Technology:
A single-step method for the preparation of tungsten and silicon carbide nanorods.
Description of Technology:
Transition metal carbides, in particular tungsten carbide, are key materials with many practical uses in the cutting tool and abrasive industries because of their special properties such as high melting point, superior hardness, low friction coefficient, high oxidation resistance and good electrical conductivity.
There are several routes to prepare transition metal carbides, including
direct carburization of the metal powder, solid-state metathesis, reductioncarburization, mechanical milling and polymeric precursor routes using
metal alkoxides. Silicon carbide (SiC), also known as carborundum or
moissanite, is a ceramic compound of silicon and carbon, useful as an
abrasive and as a semiconductor for blue LEDs, ultrafast Schottky diodes
and MESFETs (metal semiconductor field effect transistor). The simplest
manufacturing process for SiC is reaction of sand and carbon at 1600-
2500°C.
Project Status
Development of a method capable of synthesizing various transition metal
carbide nanostructure and nanorods. This single step process is termed
RAPET (Reactions under Autogenic Pressure at Elevated Temperature)
and was used first to prepare nanocomposites of metals/metal oxidescarbon
core-shell structures from different alkoxides
It has now been found that nanorods of tungsten and silicon carbides can be synthesized by RAPET of suitable precursors, at relatively low
temperatures (1000°C) and short time periods (3-10 hours). The method can thus be easily adopted for industrial production of SiC.
Commercial Significance:
Easily adaptable method for the production of nanorods from one of the hardest existing materials which are used for example in bullet-proof
vests.
Status:
Patent pending.
