[nanoPost] Selective Removal of OPA from Surfaces

BACKGROUND

Numerous research technologies exist for nano-scale patterning in monolayer films, but few are available for monolayers of industrial relevance on silicon surfaces. Electrochemical etching is known, but is relatively unselective and creates larger patterns than are required for semiconductor manufacture.

DESCRIPTION OF THE INVENTION

This technology allows selective removal of octyldecylphosphonic acid (OPA) and related molecules from monolayers prepared on silicon or aluminum surfaces. The technique complements another technology for preparing a complete OPA monolayer on a hydrophilic surface. The method is potentially the basis for a replacement or supplement to extreme UV-based photomasking techniques on the International Technology Roadmap for Semiconductors. It eliminates the deep spreading of etched patterns in silicon wafers which tend to weaken the substrate.

POTENTIAL ADVANTAGES/USES

• the technology creates patterns in a monolayer which is only 2 nm thick, compared to photomasking layers of 200 nm

• no friction/lubrication issues

• high throughput and reliability

DEVELOPMENTAL STAGE/ PATENT INFORMATION

• US & PCT Patent applications filed